GB/T43493.1一2023《半導(dǎo)體器件功率器件用碳化硅同質(zhì)外延片缺陷的無損檢測識別判據(jù)第1部分：缺陷分類》等系列國家標(biāo)準(zhǔn)解讀
打開文本圖片集
Interpretation of GB/T 43493.1-2023， Semiconductor device-Nondestructive recognition criteria ofdefects in silicon carbide homoepitaxial wafer for power devices-Part 1： Classification of defects
LU WeiliFANG YulongWANG Bo LI Shuai WANG Jian HAN Mingrui WANG QihengLI Jiantao
The l3th Research Institute of China Electronics Technology Group Corporation）
Abstract：Inrecentyears，the globaldemand for SiCmaterials hasexploded.Thequalityand performanceofSiCepitaxial wafers，thecore material of power devices，directlydetermine thereliability and service lifeof the devices.Developing national standards forSiCepitaxial wafers，standardizingdefectclassificationanddetection methods forSiCepitaxial wafers， andguidingtheproductionanduseofSiCepitaxial wafers，playanimportantroleinpromoting thehigh-qualitydevelopment of domestic SiCsemiconductor materialsand SiC-based power semiconductordevices.This article interprets threenational standards，includingGB/T43493.1-2023，Semiconductordevice—Non-destructiverecognitioncriteriaofdefects insilicon carbide homoepitaxial waferforpowerdevices-Part1：Clasificationofdefects，andevaluates thekeycontents to help standards usersbetter understand， implement，and enforce them.
Keywords：siliconcarbide;defect;national standards
0 引言
當(dāng)前，全球半導(dǎo)體產(chǎn)業(yè)正處于深度變革，化合物半導(dǎo)體成為產(chǎn)業(yè)發(fā)展新的關(guān)注點(diǎn)，我國應(yīng)加緊產(chǎn)業(yè)布局，搶占發(fā)展的主動權(quán)。（剩余3703字）