Efficient Perovskite Quantum Dots Light-emitting Diodes: Challenges and Optimization
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KeyLaboratoryforCarbon-basedFunctionalMaterials&Devices，InstituteofFunctionalNano&SoftMaterials， SoochowUniversity，Suzhou215123，China） *CorrespondingAuthor，E-mail：wangyakun@suda.edu.cn
Abstract：Perovskite quantum dotlight-emiting diodes（Pe-QLEDs） have shown immense application potential in displayand lighting fieldsdueto their narrow full-width at half maximum（FWHM）and high photoluminescence quantum yield（PLQY）.Despite significant advancements in their performance，challenges such as defects and ion migrationstillhindertheirlong-termstabilityandoperational eficiency.Toaddresstheseissues，variousoptimizationstrategies，including ligandengineering，interface passivation，andself-assembly strategy，are beingactively researched.This review focuses on thesynthesis methods，challenges andoptimization of perovskitequantum dots， which are critical forthecommercializationandlarge-scale production of high-performanceand stablePe-QLEDs.
KeyWords： perovskite quantum dot light-emiting diodes （Pe-QLEDs）；photoluminescence;defects;ionmigration
CLCnumber：TN312.8 Document code：A
DOI：10.37188/CJL.20240276 CSTR：32170.14.CJL.20240276
高效鈣鈦礦量子點發(fā)光二極管：挑戰(zhàn)和優(yōu)化
李夢嬌，王 曄，王亞坤*，廖良生（蘇州大學(xué)功能納米與軟物質(zhì)研究院，碳基功能材料與器件重點實驗室，江蘇蘇州215123）
摘要：鈣鈦礦量子點發(fā)光二極管（Pe-QLEDs）由于其窄半峰寬和高光致發(fā)光量子產(chǎn)率（PLQY）而在顯示和照明領(lǐng)域展現(xiàn)出巨大的應(yīng)用潛力。（剩余24852字）