從單晶MgZnO到非晶Ga2O3:深紫外光電探測(cè)器的發(fā)展和選擇
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關(guān)鍵詞：日盲紫外；光電探測(cè)器；鎂鋅氧；氧化鎵；非晶中圖分類(lèi)號(hào)：0482.31；TN366 文獻(xiàn)標(biāo)識(shí)碼：ADOI：10.37188/CJL.20240266 CSTR：32170.14.CJL.20240266
Deep UV Detection： from Single-crystalline MgZnO to Amorphous
LIANG Huili ， ZHU Rui，DU Xiaolong12，MEI Zengxia （1.SongshanLakeMaterialsLaboratory，Dongguan523808，China; 2.InstituteofPhysics，ChineseAcademyofSciences，Beijing1Oo19o，China） *CorrespondingAuthors，E-mail：hlliang@iphy.ac.cn；zxmei@iphy.ac.cn
Abstract：Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters.This article summarizes the research progress of deep ultraviolet photodetectors using widebandgap oxide semiconductors including MgZnO and amorphous G （a-G ）thinfilms.Ithasbeenfound that the photoresponse performance of a- thin film iscomparable or even better than that of crystalline thin films.Numerous results demonstrate that oxygen vacancy（ ）defectsplaya crucial roleindevice performance. Basedontheeffectivemodulationof defects，high performance solar-blind ultravioletphotodetectorscanbe successfullyachieved.Inaddition，thepersistent photoconductivity effect，which isusuallyaccompaniedbythepresenceof defects in oxide materials，provides a new perspective for the development of optoelectronic synaptic devices in deep ultravioletrange.Finall，abrief discusson is provided concerning theabove research progress as wel as someunsolved issues.These advancements are expected to promote the industrial application of widebandgap oxide semiconductor materials，especially a ，in deep ultraviolet detection in the future.
Keywords：solar-blind ultraviolet;photodetector; M gZ n 0 ： ;amorphous
1引言
日盲紫外輻射位于 2 2 0～2 8 0 n m ，這一波段的太陽(yáng)光在穿過(guò)大氣層時(shí)會(huì)被臭氧層強(qiáng)烈吸收，在近地大氣中幾乎不存在。（剩余24449字）