Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode

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（1.21oo96， 2.Engineering，SoutheastUniversity，Nanjing21Oo96，） （204 Corresponding Authors，E-mail：wanglifeng@seu.edu.cn; xdhuang@seu.edu.cn

Abstract：Rectifying circuit，as a crucial component for converting alternating current into direct current， plays a pivotalrole in energy harvesting microsystems.Traditional silicon-based orgermanium-based rectifierdiodes hinder system integration due to their specific manufacturing processes.Conversely，metal oxide diodes， withtheir simple fabrication techniques，er advantages for system integration.The oxygen vacancydefect oxide semiconductor willgreatly afectthe electrical performance thedevice，so the performance the diode canbe effectively controlled by adjusting the oxygen vacancy concentration. This study centers on optimizing the performance diodes bymodulating theoxygen vacancyconcentration within InGaZnO films through control oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density ，with a rectification ratio ，efficiently rectifying input sine signals with 1k H z frequency and5 V magnitude.These results demonstrate its potential in energy conversion and management.Byadjusting theoxygen vacancy，amethodology is provided foroptimizing theperformance rectifying diodes.

KeyWords：InGaZnO；Schottky barrier diode；oxygen vacancy；rectifying performance CLC number：TN311.7 Document code：A DOI：10.37188/CJL.20240265 CSTR：32170.14.CJL.20240265

氧空位對(duì)非晶InGaZnO基肖特基勢(shì)壘二極管性能的影響

賈斌'，童曉聞'，韓子康1，秦明1，王立峰2*，黃曉東1*（1.東南大學(xué)集成電路學(xué)院，江蘇南京；2.東南大學(xué)電子科學(xué)與工程學(xué)院，江蘇南京）

摘要：整流電路作為交流轉(zhuǎn)換直流的關(guān)鍵組件，在能量收集微系統(tǒng)中發(fā)揮著關(guān)鍵作用。（剩余19913字）