ZnO基透明導(dǎo)電薄膜
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中圖分類號：0472 文獻(xiàn)標(biāo)識碼：ADOI：10.37188/CJL.20240271 CSTR：32170.14.CJL.20240271
ZnO-based Transparent Conductive Films
SHI Junda，YANGRuqi，HU Dunan，LIURumin，YUTao，LYUJianguo （StateKeyLaboratoryofSiliconandAdvancedSemiconductorMaterials，SchoolofMaterialsSienceandEngineering， ZhejiangUniversity，Hangzhou310058，China） *CorrespondingAuthor，E-mail：lujianguo@zju.edu.cn
Abstract：ZnO is a typical third-generation semiconductor with a widebandgap of 3.37 eV. Intrinsic ZnO is an n-typesemiconductor，and theuseof donor elementdoping technology can significantly enhance its n-type conductivity.ZnO-basedtransparentconductive thin films have the advantagesof abundantraw material sources，diverse preparation methods，and room temperature growth，which canbe applied in many fieldssuch as optoelectronics，sensing，photothermal，etc.Among them，Al doped ZnO（AZO） is a typical transparent conductive oxide（TCO），which hasatracted muchatention inrecent years.This article takes AZOthinfilmas the mainrepresentativeand summarizes thelatest research progress of ZnO based transparent conductivefilms，including the physical and chemical properties of diffrent types of transparent conductive thin filmssuch asdoped ZnO single-layer thin films，ZnO based multi-layer thin films，and flexible ZnO based thin films.We focus on the optoelectronic properties （e. .，mobility，bandgap width，transmitance/absorption/reflectivity）of ZnO based transparent conductive films，exploring theirinherent relationships.The practical applications areintroduced indetail for ZnO based transparentconductive filmsin thefieldsoflight-emitingdiodes，solarcells，sensors，semiconductorheating，andsoon.The existing challenges and future development trends are also discussed.
Key Words： zinc oxide；transparent conductive film；donor doping；AZO；optoelectronic properties
1引言
z n O 是一種寬禁帶氧化物半導(dǎo)體，具有3.37eV的直接帶隙，是典型的第三代半導(dǎo)體材料。（剩余35023字）