ZnO基器件中的負(fù)光電導(dǎo)特性研究

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中圖分類號：0482.31 文獻(xiàn)標(biāo)識碼：A DOI：10.37188/CJL.20240270 CSTR：32170.14.CJL.20240270

NegativePhotoconductivityin ZnO Devices

ZHANG Qingyi'，YANG Yuxin2，LIU Kai ，WANG Lei1，CHEN Feng1*，XU Chunxiang （1. ， ， 3. University，21oo96，） *CorrespondingAuthors，E-mail：fengchenzql@njtech.edu.cn；xcxseu@seu.edu.cn

Abstract：Asone the best-known n-type metal oxides in third-generation semiconductor electronic devices，in particular，with its high detectionrate，highoptical gain，highsensitivity，ZnO iscommonlyusedinthe construction high-performanceultravioletphotodetectors.Thephotoconductivitybehavior zincoxidestronglydependsonitssurface interfaceproperties，the trapping detrapping photogenerated carriers bydefectstates near theconduction b.Researches have found that persistent photoconductivity even negative photoconductivity （NPC）efects can beobserved in ZnO devices duetocarierlossdefect trapping.This paperstarts from the positive photoconductivitymechanism ZnO devices， provides a detailed introduction to the negative photoconductivity phenomena observed in ZnO-based devices under different preparation conditions ambient temperatures， diffrentdriving methods，dielectric recombination， heterostructures，as well as the microscopic physicalmechanismsresponsibleforthenegativephotoconductivity effct.Underlying theNPCefectZnOcanprovideafeasible approach forconstructing highlyeficiencylogiccircuits，light-emitingdiodes，solarcells，ultra-highresolution imaging sensors.

Key words：zinc oxide；optoelectronic properties；negative photoconductivity

1引言

一般情況下，半導(dǎo)體材料在光照下會產(chǎn)生非平衡載流子，從而增加其電導(dǎo)率形成正光電導(dǎo)。（剩余26294字）