光刻增粘工藝中多因素對氨含量影響的研究
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[摘 要]文章對增粘過程中多因素對氨含量的影響趨勢和作用機制進行了分析，得出了多種不同因素與氨含量的對應關系，并通過試驗得出了增粘過氨含量隨影響因素的變化規(guī)律，為增粘過程的優(yōu)化、光刻及顯影過程的環(huán)境要求及缺陷控制提供了指導作用。
[關鍵詞]六甲基二硅氮烷；增粘工藝；氨及氨的衍生物；光刻
[中圖分類號]TN305 [文獻標志碼]A [文章編號]2095–6487（2024）12–0041–03
Research on the Influence of Multiple Factors on Ammonia Content in Photolithography Adhesive Enhancement Process
JIANG Beihong，WANG Haoran，WANG Haoran，QIN Weifan，XING Li
[Abstract]The article analyzes the influence trend and mechanism of multiple factors on ammonia content during the thickening process， and obtains the corresponding relationship between various factors and ammonia content. Through experiments， the variation law of ammonia content with influencing factors during thickening is obtained， providing guidance for the optimization of the thickening process， environmental requirements of photolithography and development processes， and defect control.
[Keywords]hexamethyldisilazane； thickening process； ammonia and its derivatives； photolithography
1 背景
隨著半導體制造技術的發(fā)展，半導體器件的特征尺寸邁向了更小的工藝節(jié)點，光刻技術在該領域的重要性變得越來越重要。（剩余3110字）