芯片尺寸與陣列偏移對圖形襯底Micro-LED光強(qiáng)空間分布的影響
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關(guān)鍵詞：Micro-LED；圖形藍(lán)寶石襯底（PSS）；非對稱率中圖分類號：TN312.8 文獻(xiàn)標(biāo)識碼：ADOI：10.37188/CJL.20240323 CSTR：32170.14.CJL.20240323
Influence of Chip Size and Array Offset on Spatial Distribution of LightIntensityinPSSMicro-LEDs
ZHANG Jiachen'，LI Panpan ，LI Jinchai23，HUANG Kai ， LI Penggang2 （1.InternationDigital EconomyCollege，Minjiang University，F(xiàn)uzhou 35o1o8，China; 2.FutureDisplay Institute，Xiamen3610oo，China； 3.CollegeofPhysical Scienceand Technology，XiamenUniversity，Xiamen 361ooo，China） *Corresponding Authors，E-mail：panpanli@xmu.edu.cn；lpg@xmu.edu.cn
Abstract：Micro-light-emiting diodes（Micro-LEDs）with high brightness，high contrast，lowenergy consumption andfastresponse and other excellent characteristics，are widely used in outdoor display，augmented realityand virtual realityandotherfields.However，theminiaturizationofMicro-LEDsbringschallnges tothecontrolof light intensity distribution.Inorder to improve itsluminous effciency，paterned sapphiresubstrate（PSS）technology isoftenused to optimize the light extraction eficiencythrough micron-scale patterned structures.Inlarge-size LEDs，PSShasasmall effctonthespatialdistributionoflightintensity，butithasasignificantefectinmicro-levelLEDs.Inthispaper，the raytracing methodisemployed tosystematicalystudythespatialdistributionoflightintensityinPSSMicro-LEDsofdifferent sizes，with an emission wavelength of 4 6 0 n m ，under various array offsets.The spatial asymmetry of the light intensitydistribution isalsoquantified.Theresultsshowthatas thesize decreases，theinfluenceofPSSonthespatial distribution of light intensity increases.When the size is 3 μm×5 μm ，the asymmetry of the spatial distribution of light intensityreaches3. 0 6 % on the y -axisand 4. 2 2 % on the x -axis，thusaffecting theluminousuniformity of theMicro-LED.
Keywords：Micro-LED；patterned sapphire substrate（PSS）；asymmetry ratio
1引言
微型發(fā)光二極管（Micro-lightemittingdiode，Micro-LED）是指將尺寸為幾微米甚至幾十微米的LED作為像素單元，直接發(fā)光成像的技術(shù)。（剩余10030字）